Freescale’s Power Amplifier Design Methodology Innovations

Webcast Title: Freescale’s Power Amplifier Design Methodology Innovations

Date: January 10, 2013
Time: 10 AM PT/ 1 PM ET/ 6 PM UTC

Presenter: Dr. Peter H. Aaen, RF Modeling and Measurement Technology Team, Freescale Semiconductor

Why this webcast is important:

This presentation provides an overview of a CAD-based design approach for high-power RF/microwave power transistors. These packaged transistors are typically constructed using several LDMOS die each with total gate peripheries up to 150 mm, metal-oxide-semiconductor (MOS) capacitors, arrays of bondwires, and are all placed within a metal-ceramic or plastic package.

To tackle the demanding design environment, a multi-technology, multiple design-kit approach has been used within Agilent’s Advanced Design System. These kits contain components that have accurate models, layout and schematic views, and are enabled to work with Momentum and/or Finite-Element-Method (FEM). This suite of design-kits standardizes the design process, enables design-re-use, and design rule check to improve design for manufacturability.

In this presentation, we will review aspects of the designer use-model where trade-offs between accuracy and simulation time must often be considered. For example, during the initial design, simple lumped component models may be used to study matching topologies. As the design progresses, design-kit components can be used for more accuracy and they support a straight-forward transition to full 3-D electromagnetic simulation with FEM. Additional libraries are later used to simulate the printed-circuit board to create high-efficiency Doherty power amplifiers.

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