Dynamic Behavior in FET Device Models

Accounting for dynamic behavior in FET device models
Inaccurate large-signal high-frequency simulation results are most often caused by use of an inadequate non-linear device model. One of the most insightful ways of testing the large-signal high-frequency behavior of a FET is to look at its dynamic response under fast pulse conditions. Similarly pulse i(v) simulation can be used to examine a FET model’s dynamic characteristic, giving vital information on its suitability for a proposed task by showing how necessary dynamic behaviors are modeled. Such critical early insight avoids time consuming and costly problems later in the design cycle.

Read Article: Pub Num: 5990-8706EN


Leave a Reply

Fill in your details below or click an icon to log in:

WordPress.com Logo

You are commenting using your WordPress.com account. Log Out /  Change )

Google+ photo

You are commenting using your Google+ account. Log Out /  Change )

Twitter picture

You are commenting using your Twitter account. Log Out /  Change )

Facebook photo

You are commenting using your Facebook account. Log Out /  Change )


Connecting to %s