Accounting for dynamic behavior in FET device models
Inaccurate large-signal high-frequency simulation results are most often caused by use of an inadequate non-linear device model. One of the most insightful ways of testing the large-signal high-frequency behavior of a FET is to look at its dynamic response under fast pulse conditions. Similarly pulse i(v) simulation can be used to examine a FET model’s dynamic characteristic, giving vital information on its suitability for a proposed task by showing how necessary dynamic behaviors are modeled. Such critical early insight avoids time consuming and costly problems later in the design cycle.
Read Article: Pub Num: 5990-8706EN
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